• DocumentCode
    1065050
  • Title

    Influence of ΦMS(T) in the determination of the Si-SiO2surface states

  • Author

    Gonçalves, Fontella N. ; Charry, E.

  • Author_Institution
    University of Sao Paulo, Sao Paulo, Brasil
  • Volume
    26
  • Issue
    9
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    1377
  • Lastpage
    1378
  • Abstract
    The determination of fast surface states at the Si-Si02system by the Gray-Brown low-temperature technique is carefully analyzed. Included in this analysis is the variation of the semiconductor work function with the temperature and the doping impurity partial ionization at low temperature. It is shown that particularly the influence of the semiconductor work function is very significant. For instance, we obtained for an Si-SiO2system a number of surface states, with energy levels between 0.32 and 0.53 eV, N_{fs} \\simeq 8.5 \\times 10^{9} cm-2or N_{fs} \\simeq 1.0 \\times 10^{11} cm-2, the difference due to the influence of the semiconductor work function only.
  • Keywords
    Capacitance; Capacitors; Dielectric constant; Energy states; Ionization; Semiconductor device doping; Semiconductor impurities; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19614
  • Filename
    1480192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065050