• DocumentCode
    1065066
  • Title

    Influence of stress on the high coercive force of gamma -Fe2O3 thin films

  • Author

    Langlet, M. ; Joubert, J.C.

  • Author_Institution
    Lab. des Mat. et du Genie Phys., St. Martin d´´Heres, France
  • Volume
    24
  • Issue
    2
  • fYear
    1988
  • fDate
    3/1/1988 12:00:00 AM
  • Firstpage
    1691
  • Lastpage
    1693
  • Abstract
    Nontextured gamma -Fe2O3 polycrystalline films have been obtained by oxidation of magnetic films deposited by a modified OMCVD (organometallic chemical vapor deposition) technique. The influence of the stress on the crystallographic and magnetic properties of the films has been studied in regard to the experimental deposition conditions. The sin2 Psi method has been used to determine the origin of these stresses. Two kinds of stresses affect the iron oxide films: thermal stress and oxidation stress. The completely oxidized gamma -Fe2O3 films are shown to be in a tensile planar state that leads to an induced perpendicular anisotropy through magnetostrictive coupling. Controlling the experimental parameters (substrate temperature, annealing conditions, grain size) makes it possible to obtain perpendicular coercive force values of about 90 Oe. This high coercive force is associated with a stress of 1010 dyne/cm2, which does not seem to affect the film adherence.
  • Keywords
    adhesion; coercive force; iron compounds; magnetic anisotropy; magnetic thin films; magnetostriction; oxidation; thermal stresses; Fe2O3; adherence; crystallographic properties; gamma -Fe2O3; high coercive force; induced perpendicular anisotropy; magnetostrictive coupling; nontextured polycrystalline films; oxidation stress; perpendicular coercive force; sin2 Psi method; stress effects; tensile planar state; thermal stress; Anisotropic magnetoresistance; Chemical vapor deposition; Coercive force; Crystallography; Iron; Magnetic films; Magnetic properties; Oxidation; Tensile stress; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.11572
  • Filename
    11572