DocumentCode :
1065082
Title :
Photonic integration: Si or InP substrates?
Author :
Liang, D. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA
Volume :
45
Issue :
12
fYear :
2009
Firstpage :
578
Lastpage :
581
Abstract :
A brief review of recent progress in photonic integrated circuits (PICs) is presented. By examining Moore´s Law and the roadmap of conventional electronic ICs, valuable lessons in host material selection for PICs are discussed. Finding a primary host material for integration is necessary and vital to the success of the PIC industry. Initial success has been achieved in both InP-based and silicon-based commercial PICs; however, we believe that cost and performance may select silicon as the primary host material, with the urgency to deploy optical interconnects on Si electronic ICs as one of the main reasons. A recently introduced hybrid silicon evanescent platform and devices and silicon/germanium APDs are reviewed as examples to understand the viability of silicon PICs and lead to an understanding of a possible roadmap to next generation large-scale PICs.
Keywords :
integrated optics; optical interconnections; optical interconnects; photonic integrated circuits; photonic integration;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1279
Filename :
5069750
Link To Document :
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