Title :
Transient response of GaAs integrated circuit to pulsed optical carrier injection
Author :
Carruthers, T.F. ; Weller, J.F.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
11/24/1988 12:00:00 AM
Abstract :
Upsets of nanosecond duration were induced in a 3 GHz GaAs divide-by-2 integrated circuit, by illuminating circuit components with focused 100 ps, 830 nm optical pulses. The nature and severity of the upsets depended upon the region of the circuit which was illuminated. An upset recovery time varying logarithmically with the incident optical energy indicated that the circuit recovers as the excess carriers recombine
Keywords :
dividing circuits; field effect integrated circuits; laser beam effects; transient response; 830 nm; circuit components; divide-by-2 integrated circuit; excess carriers; incident optical energy; nanosecond duration; upset recovery time;
Journal_Title :
Electronics Letters
