• DocumentCode
    1065319
  • Title

    Photoluminescence decay of 1.54 μm Er3+ emission in Si and III-V semiconductors

  • Author

    Klein, P.B. ; Pomrenke, G.S.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    24
  • Issue
    24
  • fYear
    1988
  • fDate
    11/24/1988 12:00:00 AM
  • Firstpage
    1502
  • Lastpage
    1503
  • Abstract
    The luminescence lifetime of the 1.54 μm Er3+ emission has been studied in a variety of Si and III-V semiconductor host materials. The ≈1 millisecond lifetimes observed in all hosts indicate that the Er emission is largely radiative, and suggests that Er may be the rare earth dopant best suited for device applications. Additional competing nonradiative effects are seen to appear for certain growth conditions
  • Keywords
    III-V semiconductors; elemental semiconductors; erbium; photoluminescence; semiconductor doping; silicon; 1 ms; 1.54 micron; Er3+ emission; Si:Er3+; competing nonradiative effects; luminescence lifetime; photoluminescence decay; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    27929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065319