Title :
High output power GaInAsP/InP superluminescent diode at 1.3 μm
Author :
Kashima, Y. ; Kobayashi, Masato ; Takano, Hirotaka
Author_Institution :
Compound Semicond Devices Center, OKI Electric Ind. Co. Ltd., Tokyo
fDate :
11/24/1988 12:00:00 AM
Abstract :
The authors have developed a 1.3 μm superluminescent diode using a revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0-50°C, and the coupled power into a single-mode fibre reached 1 mW
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; 0 to 50 C; 1 mW; 1.3 micron; GaInAsP-InP; LEDs; characteristics; coupled power; light diffusion surface; semiconductors; single-mode fibre; structure; superluminescent diode;
Journal_Title :
Electronics Letters
