DocumentCode
1065367
Title
High output power GaInAsP/InP superluminescent diode at 1.3 μm
Author
Kashima, Y. ; Kobayashi, Masato ; Takano, Hirotaka
Author_Institution
Compound Semicond Devices Center, OKI Electric Ind. Co. Ltd., Tokyo
Volume
24
Issue
24
fYear
1988
fDate
11/24/1988 12:00:00 AM
Firstpage
1507
Lastpage
1508
Abstract
The authors have developed a 1.3 μm superluminescent diode using a revolutionary structure. A light diffusion surface is placed diagonally on the active layer within the device to suppress the lasing action. Superluminescent diode characteristics were achieved in the range 0-50°C, and the coupled power into a single-mode fibre reached 1 mW
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical communication equipment; 0 to 50 C; 1 mW; 1.3 micron; GaInAsP-InP; LEDs; characteristics; coupled power; light diffusion surface; semiconductors; single-mode fibre; structure; superluminescent diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
27933
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