DocumentCode :
1065374
Title :
Nanopower CMOS sub-bandgap reference with 11 ppm/°C temperature coefficient
Author :
Yan, W. ; Li, W. ; Liu, R.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai
Volume :
45
Issue :
12
fYear :
2009
Firstpage :
627
Lastpage :
629
Abstract :
Two nanopower CMOS sub-bandgap references have been designed with the Chartered 0.35 mum CMOS process, which generate two precise voltages of 96.6 and 108.9 mV with minimal temperature coefficients of 11.4 and 9.2 ppm/degC, respectively. Both circuits operate properly with a supply voltage down to 1.1 V and a supply current below 26 nA. The power supply rejection ratio for each circuit without any filtering capacitor at 100 Hz and 10 MHz is lower than 60 and 40 dB, respectively.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; reference circuits; frequency 10 MHz; frequency 100 Hz; nanopower CMOS sub-bandgap reference design; power supply rejection ratio; size 0.35 mum; temperature coefficients; voltage 108.9 mV; voltage 96.6 mV;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.3705
Filename :
5069778
Link To Document :
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