Title :
8 Gbit/s GaAs logic ICs for optical fibre communication systems
Author :
Hamano, H. ; Amemiya, I. ; Ihara, T. ; Onodera, H. ; Onodera, T. ; Shimizu, S.
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
fDate :
11/24/1988 12:00:00 AM
Abstract :
The authors have fabricated GaAs MESFET ICs for optical fibre transmission systems over 5 Gbit/s, using a 0.6 μm gate BP-LDD structure. The ICs had a 45/35 ps rise/fall time for the OR/NOR gate, and over 8 Gbit/s operations for the D-F/F and the T-F/F
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; flip-flops; gallium arsenide; integrated circuit technology; integrated logic circuits; optical communication equipment; semiconductor technology; 0.6 micron; 35 to 45 ps; 8 Gbit/s; D-type flip-flops; GaAs; MESFET ICs; NOR gate; OR gate; T-type flip-flops; buried p-layer LDD; fall time; lightly doped drain; logic ICs; optical fibre communication systems; optical fibre transmission systems; rise time; semiconductors;
Journal_Title :
Electronics Letters
