Title :
InP/InGaAs uni-travelling carrier heterojunction phototransistors
Author :
Kim, J. ; Kanakaraju, S. ; Johnson, W.B. ; Lee, C.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland at College Park, College Park, MD
Abstract :
A novel heterojunction phototransistor using a uni-travelling carrier photodiode structure in the base and collector layers is proposed and fabricated. A 5 times 5 mum optical detection area device shows an optical gain cutoff frequency of 52 GHz and an optical gain of 37 dB at 1 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; optical materials; photodiodes; phototransistors; InP-InGaAs; frequency 1 GHz; frequency 52 GHz; gain 37 dB; heterojunction phototransistor fabrication; optical detection area device; optical gain; optical gain cutoff frequency; size 5 mum; uni-travelling carrier photodiode structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.0243
