• DocumentCode
    1065571
  • Title

    Method for extraction of η parameter characterising μeff against Eeff curves in FD-SOI Si MOS devices

  • Author

    Bennamane, K. ; Ghibaudo, G. ; Benfdila, A.

  • Author_Institution
    IMEP-LAHC Lab., Minatec-INPG, Grenoble
  • Volume
    45
  • Issue
    12
  • fYear
    2009
  • Firstpage
    655
  • Lastpage
    657
  • Abstract
    A novel method for the extraction of the eta parameter characterising the etaeff(E eff) curves in FD-SOI Si MOS transistors is proposed. Using this method, it is found that eta is about 0.6-0.7 for electrons and 0.3-0.4 for holes, whatever the gate stacks (SiO2, high-k and box oxide). These obtained eta values differ significantly from standard bulk ones, justifying the interest of such a eta extraction method for FD-SOI architectures.
  • Keywords
    MOSFET; silicon-on-insulator; FD-SOI; MOS transistors; gate stacks;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.0044
  • Filename
    5069796
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065571