DocumentCode
1065696
Title
Variations of linewidth enhancement factor and linewidth as a function of laser geometry in (AlGa)As lasers
Author
Lee, Sang S. ; Figueroa, Luis ; Ramaswamy, Ramu
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Volume
25
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
862
Lastpage
870
Abstract
A quantitative analysis of the laser geometry dependence of the linewidth enhancement factor α and linewidth Δf in GaAs/AlGaAs lasers is presented. Analytical expressions for the refractive index change and α are presented. Variations of α and Δf depending on active layer thickness and laser length are estimated by using the expressions and previous experimental data of absorption spectra. Considering small variations in the reported experimental data depending on laser type, it is shown that the calculated values of α agree well with the experimental data. The magnitude of α decreases gradually with the decrease of active layer thickness and laser length. Since the change of active layer thickness affects only α, neglecting small variations of other terms in the linewidth expression, the reduction of active layer thickness is suggested to be a practical method for the reduction of linewidth.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; AlGaAs laser; GaAs-AlGaAs; absorption spectra; active layer thickness; laser geometry; laser length; linewidth enhancement factor variations; linewidth variations; quantitative analysis; refractive index change; semiconductor laser; Absorption; Charge carrier density; Diode lasers; Gallium arsenide; Geometrical optics; Laser beams; Laser transitions; Photonic band gap; Refractive index; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.27973
Filename
27973
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