DocumentCode
1065729
Title
Electrical trimming of heavily doped polycrystalline silicon resistors
Author
Amemiya, Yoshihito ; Ono, Terukazu ; Kato, Kotaro
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo, Japan
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1738
Lastpage
1742
Abstract
The newly discovered phenomenon of resistance decrease in heavily doped polycrystalline silicon resistors by conduction of high current densiy has been investigated experimentally. Threshold values exist for the impurity concentration and for the applied current density for the occurrence of this phenomenon. Decreased resistance is stable as far as current higher than the threshold value is not applied thereafter. Applications to D/A converters and operational amplifiers are described. Electrical trimming of resistors in the circuits with accuracy of ±0.01 percent is easily attained.
Keywords
Crystallization; Current density; Doping; Electric resistance; Electrodes; Impurities; Resistors; Silicon; Space vector pulse width modulation; Thermal resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19679
Filename
1480257
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