Title :
Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles
Author :
Nakamura, Kenji ; Shimizu, Akira ; Koshiba, Masanori ; Hayata, Kazuya
Author_Institution :
Canon Inc., Kanagawa, Japan
fDate :
5/1/1989 12:00:00 AM
Abstract :
A finite-element method for the analysis of eigenstates in a quantum well, which is based on the Galerkin procedure, is discussed. A general boundary condition of the envelope function at the heterointerface is introduced by using the transfer matrix. The validity of the method is confirmed by calculating the eigenstates of GaAs/AlGaAs and InAs/GaSb rectangular quantum wells. Numerical examples of voltage-applied quantum wells are presented.
Keywords :
III-V semiconductors; aluminium compounds; eigenvalues and eigenfunctions; finite element analysis; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; GaAs-AlGaAs; Galerkin procedure; InAs-GaSb; arbitrary potential profiles; arbitrary semiconductors; boundary condition; eigenstates; envelope function; finite-element method; heterointerface; quantum wells; rectangular quantum wells; transfer matrix; voltage-applied quantum wells; Boundary conditions; Effective mass; Finite element methods; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Moment methods; Schrodinger equation; Senior members; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
