مرکز منطقه ای اطلاع رساني علوم و فناوري - Relating computer simulation studies with interface state measurements on MIS solar cells

DocumentCode :

1065791

Title :

Relating computer simulation studies with interface state measurements on MIS solar cells

Author :

Kim, Jin K. ; Anderson, Wayne A. ; Hyland, S. ; Hyland, Sandra

Author_Institution :

RCA David Sarnoff Research Center, Princeton, NJ

Volume :

Issue :

fYear :

1979

fDate :

11/1/1979 12:00:00 AM

Firstpage :

1777

Lastpage :

1782

Abstract :

A lock-in-amplifier technique has been used to measure interface state density (NSS) values ranging from 2 × 10¹¹-3 × 10¹³states/cm². eV depending on energy in the gap, type of Si substrate, and choice of Schottky metal used in MIS diodes. Polycrystalline, ribbon, and

Keywords :

Bonding; Computer simulation; Costs; Density measurement; Grain boundaries; Helium; Interface states; Photovoltaic cells; Silicon; Voltage;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1979.19685

Filename :

1480263

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1065791