$G$ -Band Distributed Microelectromechanical Components Based on CMOS Compatible Fabrication

Author

Vähä-Heikkilä, Tauno ; Ylönen, Mari

Author_Institution

MilliLab, Espoo

Volume

Issue

fYear

2008

fDate

3/1/2008 12:00:00 AM

Firstpage

720

Lastpage

728

Abstract

Microelectromechanical systems (MEMS) technology has been used for realizing G-band (140-220 GHz) distributed MEMS transmission line components. Novel dielectric-less MEMS components, as well as switched MEMS capacitors, have been fabricated with CMOS compatible surface micromachining, and experimental results are presented up to 220 GHz.

Keywords

micromachining; micromechanical devices; millimetre wave devices; varactors; CMOS compatible fabrication; CMOS compatible surface micromachining; G-band distributed microelectromechanical components; MEMS technology; RF MEMS; dielectric-less MEMS components; distributed MEMS transmission line components; frequency 140 GHz to 220 GHz; microelectromechanical systems; switched MEMS capacitors; varactor; $G$-band; CMOS; RF MEMS; microelectromechanical systems (MEMS); varactor;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.916885

Filename

4449069

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065844