Title :
Raman microprobe analysis of strain induced by patterned dielectric films of GaAlAs structures
Author :
Radens, Carl J. ; Roughani, Bahram ; Jackson, Howard E. ; Boyd, Joseph T. ; Burnham, Robert D.
Author_Institution :
Cincinnati Univ., OH, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
Raman spectra from GaAlAs layers with Si3N4 stripes obtained with a microprobe are discussed. The spatial resolution of these Raman spectra was smaller than the scale of the microfabricated features. A significant stress-induced shift in the GaAlAs longitudinal optic (LO) phonon frequency has been observed under 3.5 μm wide Si3N4 stripes. Rapid thermal annealing reduced the LO phonon frequency shift, and thus the stress, under the Si3N4 stripe. A corresponding dramatic change in optical waveguide behavior under the stripe was observed.
Keywords :
III-V semiconductors; Raman spectra of inorganic solids; aluminium compounds; crystal surface and interface vibrations; gallium arsenide; optical waveguides; semiconductor-insulator boundaries; silicon compounds; stress-strain relations; 3.5 micron; GaAlAs-Si3N4; Raman microprobe analysis; Raman spectra; induced strain; layers; longitudinal optic phonon frequency; optical waveguide behavior; patterned dielectric films; rapid thermal annealing; semiconductor; spatial resolution; stress; stress-induced shift; stripes; Capacitive sensors; Dielectrics; Frequency; Optical waveguides; Pattern analysis; Phonons; Rapid thermal annealing; Spatial resolution; Thermal stresses; Waveguide transitions;
Journal_Title :
Quantum Electronics, IEEE Journal of
