Title :
Raman spectroscopy and the characterization of buried semiconductor layers
Author :
Tsang, James C. ; Iyer, S.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
The ability of Raman scattering to characterize a subnanometer buried layer of Ge in Si (100) with respect to composition, strain, homogeneity, structure, and thickness is described. The inability of Raman scattering to provide quantitative information on the thickness of a buried thin layer is discussed.
Keywords :
Raman spectra of inorganic solids; Raman spectroscopy; elemental semiconductors; germanium; silicon; Ge-Si; Raman scattering; Raman spectroscopy; buried semiconductor layers; buried thin layer; semiconductor composition; semiconductor homogeneity; semiconductor strain; semiconductor structure; semiconductor thickness; Atomic layer deposition; Capacitive sensors; Crystallization; Electromagnetic scattering; Optical films; Optical scattering; Particle beam optics; Probes; Raman scattering; Spectroscopy;
Journal_Title :
Quantum Electronics, IEEE Journal of
