Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si

Author

Fouquet, Julie E. ; Saxena, Ram R. ; Patterson, George A.

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA, USA

Volume

25

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

1025

Lastpage

1034

Abstract

Photoluminescence of epitaxial high-resistivity GaAs and InP at liquid-helium temperatures has been studied in both the near-band-edge region and at wavelengths to ≥1.4 μm. GaAs grown at low (300°C) substrate temperature for the purpose of reducing backgating in FET integrated circuits contains Ga vacancies, as evidenced by V_GA-Si_GA pair of luminescence at 1.17 eV in Si-containing material structures. This is the first observation of Ga vacancy-related luminescence in low-temperature-grown FET buffer layer structures. These peaks are also observed in epitaxial GaAs on Si. Fe-doped InP grown by organometallic vapor-phase epitaxy for lasers exhibits greatly the reduced near-band-edge photoluminescence efficiency, and emits Fe-related peaks at 1.07, 1.10, and 1.135 eV.

Keywords

III-V semiconductors; gallium arsenide; iridium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; silicon; vapour phase epitaxial growth; 1.07 eV; 1.10 eV; 1.135 eV; 1.17 eV; 1.4 micron; 300 degC; FET integrated circuits; GaAs; GaAs-Si; III-V semiconductors; InP; InP:Fe; high-resistivity epitaxial semiconductor; organometallic vapor-phase epitaxy; photoluminescence; vacancy-related luminescence; Buffer layers; Epitaxial growth; FET integrated circuits; Gallium arsenide; Indium phosphide; Luminescence; Optical materials; Photoluminescence; Substrates; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.27996

Filename

27996