• DocumentCode
    1065989
  • Title

    Photoluminescence and diffusivity of free excitons in doped silicon

  • Author

    Chen, Y.H. ; Lyon, S.A.

  • Author_Institution
    Princeton Univ., NJ, USA
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    5/1/1989 12:00:00 AM
  • Firstpage
    1053
  • Lastpage
    1055
  • Abstract
    The diffusivity of free excitons (FE) in an inhomogeneously doped Si sample is evaluated by spatially resolved photoluminescence. The FE lifetimes and diffusion lengths are directly measured between 12 and 23 K. The FE diffusivity is found to be ~11 cm2/s at 12 K and increases with temperature. Exciton diffusion in doped silicon is found to be governed by their capture and release from neutral impurities. Implications of these measurements for the use of low-temperature photoluminescence as a method of spatially profiling dopant distributions are discussed.
  • Keywords
    diffusion in solids; elemental semiconductors; excitons; luminescence of inorganic solids; photoluminescence; silicon; 12 to 23 K; FE diffusivity; FE lifetimes; diffusivity; doped Si sample; free excitons; semiconductors; spatially resolved photoluminescence; Damping; Excitons; Impurities; Iron; Length measurement; Luminescence; Photoluminescence; Silicon; Spatial resolution; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.27999
  • Filename
    27999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065989