Title :
New theory of delays in semiconductor lasers
Author :
Ray, M. ; Baral, S.S. ; Bhattacharyya, D.L.
Author_Institution :
University of College of Science, Calcutta, India
fDate :
10/1/1976 12:00:00 AM
Abstract :
A simple model which can explain practically all important features of time delays in GaAs lasers is presented. It assumes only the presence of traps within the forbidden band and considers that the relative movement of quasi-Fermi levels of traps with temperature controls the population of the empty traps which act as saturable absorbers and thereby produce delays.
Keywords :
Charge carrier processes; Delay effects; Electron traps; Gallium arsenide; Laser modes; Laser theory; Laser transitions; Optical pulses; Semiconductor lasers; Temperature;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1976.1069057
