DocumentCode :
1066067
Title :
The resonant ATR (attenuated total reflectance) approach to semiconductor diagnostics and its application to the depth-profiling of multilayer structures
Author :
Bosacchi, Bruno ; Oehrle, Robert C.
Author_Institution :
AT&T Bell Lab., Princeton, NJ, USA
Volume :
25
Issue :
5
fYear :
1989
fDate :
5/1/1989 12:00:00 AM
Firstpage :
1086
Lastpage :
1092
Abstract :
The resonant ATR spectroscopy (attenuated total reflectance) approach is discussed as a way to enhance the sensitivity of optical measurements through the excitation of resonant modes. In particular, the application of the method to the depth profiling of a multilayer structure is considered. After reviewing some results which illustrate the sensitivity of the technique, its transfer to a manufacturing environment is discussed. Finally, preliminary wavelength ATR spectra which allow the simultaneous determination of thickness and composition of a multilayer structure are presented.
Keywords :
light reflection; reflectivity; reflectometry; semiconductors; spectroscopy; attenuated total reflectance spectroscopy; multilayer structures; resonant ATR; resonant modes; semiconductor diagnostics; sensitivity; Nonhomogeneous media; Optical attenuators; Optical reflection; Optical scattering; Optical sensors; Production; Reflectivity; Resonance; Semiconductor device manufacture; Spectroscopy;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.28004
Filename :
28004
Link To Document :
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