DocumentCode

1066071

Title

TA-A4 n-type doping of InP by implantation and electron-beam annealing

Author

Davies, D.E. ; Lorenzo, J.P. ; Ryan, T.G.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1833

Lastpage

1834

Keywords

Annealing; Chemical lasers; Doping; Gallium arsenide; Indium phosphide; Ion implantation; Laboratories; Photovoltaic cells; Silicon; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19713

Filename

1480291