DocumentCode
1066090
Title
TA-A3 laser and electron-beam annealing of implanted semi-insulating GaAs
Author
Tandon, J.L. ; Eisen, F.H.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1833
Lastpage
1833
Keywords
Amorphous materials; Annealing; Doping; Gallium arsenide; Indium phosphide; Optical pulses; Solid lasers; Surface cracks; Surface emitting lasers; Surface morphology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19715
Filename
1480293
Link To Document