Title :
TA-A3 laser and electron-beam annealing of implanted semi-insulating GaAs
Author :
Tandon, J.L. ; Eisen, F.H.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Doping; Gallium arsenide; Indium phosphide; Optical pulses; Solid lasers; Surface cracks; Surface emitting lasers; Surface morphology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19715
