Title :
TA-B1 very low current-threshold GaAs-AlxGa1-xAs double-heterostructure lasers grown by molecular beam epitaxy
fDate :
11/1/1979 12:00:00 AM
Keywords :
Current density; DH-HEMTs; Degradation; Gallium arsenide; Laser beams; Laser excitation; Mirrors; Molecular beam epitaxial growth; Photoluminescence; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19720
