• DocumentCode
    1066196
  • Title

    TA-B9 1800-hour continuous operation of CW room-temperature AlxGa1-xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

  • Author

    Dupuis, Russell

  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1837
  • Lastpage
    1838
  • Keywords
    Chemical lasers; Chemical vapor deposition; DH-HEMTs; Gallium arsenide; Gas lasers; Life testing; Pulsed laser deposition; Quantum well lasers; Schottky diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19725
  • Filename
    1480303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066196