DocumentCode
1066224
Title
TP-A3 interaction of closely spaced junctions
Author
Lee, S.C. ; Pearson, G.L.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1838
Lastpage
1839
Keywords
Electron devices; Fabrication; Gallium arsenide; Laboratories; P-n junctions; Photonic band gap; Photovoltaic cells; Schottky barriers; Semiconductor device doping; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19728
Filename
1480306
Link To Document