DocumentCode
1066238
Title
TP-A1 enhancement of effective barrier height in a Ti-silicon Schottky diode using low-energy ion implantation
Author
Li, S.S. ; Kim, C.S. ; Wang, K.L.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1838
Lastpage
1838
Keywords
Gallium arsenide; Heterojunctions; Ion implantation; Photovoltaic cells; Schottky barriers; Schottky diodes; Semiconductor process modeling; Silicon; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19729
Filename
1480307
Link To Document