DocumentCode :
1066266
Title :
TP-A4 C-V profiling through n-n heterojunctions
Author :
Kroemer, H.
Volume :
26
Issue :
11
fYear :
1979
fDate :
11/1/1979 12:00:00 AM
Firstpage :
1839
Lastpage :
1839
Keywords :
Capacitance-voltage characteristics; Electrons; Heterojunctions; Microwave theory and techniques; Monitoring; Oxidation; P-n junctions; Photovoltaic cells; Schottky barriers; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19732
Filename :
1480310
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1066266
