Title :
TP-C9 high-gain InP-InGaAsP avalanche photodiodes
Author :
Nishida, Keisuke ; Taguchi, Katsuhisa ; Matsumoto, Yuki
fDate :
11/1/1979 12:00:00 AM
Keywords :
Avalanche breakdown; Avalanche photodiodes; Etching; Fabrication; Indium phosphide; Laboratories; P-n junctions; Semiconductor diodes; Substrates; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19747
