Title :
TP-C13 ionization coefficients for electrons and holes in GaSb p-i-n and InP Schottky avalanche photodiodes
Author :
Hildebrand, O. ; Kuebart, W. ; Deufel, R. ; Benz, K.W. ; Pilkuhn, M.H.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Avalanche photodiodes; Charge carrier processes; Electric breakdown; Etching; Extraterrestrial measurements; Indium phosphide; Ionization; P-i-n diodes; PIN photodiodes; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19750
