• DocumentCode
    1066444
  • Title

    TP-C13 ionization coefficients for electrons and holes in GaSb p-i-n and InP Schottky avalanche photodiodes

  • Author

    Hildebrand, O. ; Kuebart, W. ; Deufel, R. ; Benz, K.W. ; Pilkuhn, M.H.

  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1845
  • Lastpage
    1846
  • Keywords
    Avalanche photodiodes; Charge carrier processes; Electric breakdown; Etching; Extraterrestrial measurements; Indium phosphide; Ionization; P-i-n diodes; PIN photodiodes; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19750
  • Filename
    1480328