Title :
TP-C14 ionization coefficients of electrons and holes in InP
Author :
Armiento, C.A. ; Groves, S.H. ; Hurwitz, C.E.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Charge carrier processes; Diodes; Electric breakdown; Etching; Force measurement; Indium phosphide; Ionization; Laboratories; Leakage current; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19752
