DocumentCode
1066495
Title
TP-C15 guarded avalanche photodiodes in InP fabricated by a double ion implantation technique
Author
Donnelly, J.P. ; Diadiuk, V. ; Armiento, C.A. ; Groves, S.H.
Volume
26
Issue
11
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1846
Lastpage
1846
Keywords
Avalanche photodiodes; Diodes; Electric breakdown; Indium phosphide; Ion implantation; Laboratories; Laser modes; Leakage current; Optical surface waves; P-n junctions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19754
Filename
1480332
Link To Document