Title :
WA-A4 characteristics of the currents in p-n-p bipolar transistors with degenerate base region
fDate :
11/1/1979 12:00:00 AM
Keywords :
Bipolar transistors; Circuits; Density measurement; Doping; Impurities; Photonic band gap; Physics; Silicon; Temperature dependence; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19759
