Title :
Fabrication Process for RSFQ/Qubit Systems
Author :
Grönberg, Leif ; Hassel, Juha ; Helistö, Panu ; Ylilammi, M.
Author_Institution :
VTT, Espoo
fDate :
6/1/2007 12:00:00 AM
Abstract :
We have developed a Nb/Al/AlOx/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.
Keywords :
aluminium; aluminium compounds; critical current density (superconductivity); niobium; superconducting junction devices; Nb-Al-AlOx-Nb; RSFQ/qubit circuit; critical current density; trilayer fabrication process; wafer level room temperature measurement; Circuits; Cooling; Critical current density; Fabrication; Josephson junctions; Niobium; Plasma temperature; Resistors; Sputter etching; Wet etching; Fabrication; RSFQ; niobium; qubit;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2007.897721
