• DocumentCode
    1066630
  • Title

    Fabrication Process for RSFQ/Qubit Systems

  • Author

    Grönberg, Leif ; Hassel, Juha ; Helistö, Panu ; Ylilammi, M.

  • Author_Institution
    VTT, Espoo
  • Volume
    17
  • Issue
    2
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    952
  • Lastpage
    954
  • Abstract
    We have developed a Nb/Al/AlOx/Nb trilayer process aimed towards integration of RSFQ and qubit circuits. The emphasis is to provide a process enabling RSFQ operation at sub-100 mK temperatures required for qubit operation. In this paper we describe the main properties of the process. We also present experimental characterization data and in particular introduce a method of determining the critical current density by wafer level room temperature measurements.
  • Keywords
    aluminium; aluminium compounds; critical current density (superconductivity); niobium; superconducting junction devices; Nb-Al-AlOx-Nb; RSFQ/qubit circuit; critical current density; trilayer fabrication process; wafer level room temperature measurement; Circuits; Cooling; Critical current density; Fabrication; Josephson junctions; Niobium; Plasma temperature; Resistors; Sputter etching; Wet etching; Fabrication; RSFQ; niobium; qubit;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2007.897721
  • Filename
    4277419
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066630