• DocumentCode
    1066676
  • Title

    Threshold behavior of CW GaAs-AlGaAs injection lasers

  • Author

    Butler, Jerome K. ; Wang, Chung-Shu

  • Author_Institution
    Southern Methodist University, Dallas, TX, USA
  • Volume
    12
  • Issue
    3
  • fYear
    1976
  • fDate
    3/1/1976 12:00:00 AM
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    This paper investigates some of the properties of continuous wave (CW) (AlGa)As-GaAs injection lasers with Al in the active region. The active region gain at threshold g th is estimated as a function of Al concentration in the active region. The basic configuration is a five-layer structure with GaAs as the two outer regions; the center region is AlyGa1-yAs and the two surrounding layers are AlxGa1-xAs .
  • Keywords
    Artificial intelligence; Gallium arsenide; Heat sinks; Heat transfer; Laser modes; Laser theory; Optical pulses; Refractive index; Region 2; Region 3;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1976.1069113
  • Filename
    1069113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066676