Title :
Submicrometre gate length scaling of inversion channel heterojunction field effect transistor
Author :
Kiely, P.A. ; Vang, T.A. ; Micovic, M. ; Lepore, A. ; Taylor, Graham W. ; Malik, Rohit ; Docter, D.P. ; Evaldsson, P.A. ; Claisse, P.R. ; Brown-Goebeler, K.F. ; Storz, F.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
3/17/1994 12:00:00 AM
Abstract :
The scaling to 0.5 μm of the inversion channel HFET with a single strained InGaAs quantum well is described. A unity current gain frequency of 40 GHz, gm=205 mS/mm and VTH=-0.34 V have been obtained for 0.5×100 μm2 devices. For shorter gate lengths, threshold shifts are sizeable so that in order to scale further, modifications to the growth and processing are required
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; solid-state microwave devices; 0.5 micron; 205 mS/mm; 40 GHz; HFET; InGaAs; heterojunction field effect transistor; inversion channel; single strained InGaAs quantum well; submicron gate length scaling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940354
