• DocumentCode
    1066683
  • Title

    WP-A3 The use of Si3N4for GaAs surface passivation: Electrical characteristics and applications to enhancement-type MISFET´s

  • Author

    Bayraktaroglu, B. ; Schuermeyer, F.L.

  • Volume
    26
  • Issue
    11
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1853
  • Lastpage
    1854
  • Keywords
    Capacitance-voltage characteristics; Electric variables measurement; Gallium arsenide; Insulation; Optical films; Plasma chemistry; Plasma measurements; Plasma properties; Pollution measurement; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19772
  • Filename
    1480350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066683