DocumentCode

1066696

Title

WP-A6 transferred-electron device development using silicon-ion implantation in GaAs

Author

Dietrich, H.B. ; Christou, Alex ; Bark, M.L.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1854

Lastpage

1855

Keywords

Anodes; Doping profiles; Electrons; FETs; Failure analysis; Gallium arsenide; Implants; Molecular beam epitaxial growth; Substrates; Tin;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19774

Filename

1480352