• DocumentCode
    1066710
  • Title

    Dynamic characterisation of Si/SiGe power HBTs

  • Author

    Erben, U. ; Gruhle, A. ; Schuppen, A. ; Kibbel, H. ; Koenig, U.

  • Author_Institution
    Dept. of Electron. Devices & Circuits, Ulm Univ.
  • Volume
    30
  • Issue
    6
  • fYear
    1994
  • fDate
    3/17/1994 12:00:00 AM
  • Firstpage
    525
  • Lastpage
    527
  • Abstract
    Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1×105 A/cm2, a maximum frequency of oscillation of 49 GHz was observed. At 10 GHz a maximum unilateral gain of 14 dB is available, and a CW output power of 1.3 W/mm for a device with 10 parallel emitter-fingers of 1×10 μm2 each was predicted, from CW measurements
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power transistors; semiconductor device testing; silicon; solid-state microwave devices; 1.3 W; 14 dB; 46 GHz; 49 GHz; CW measurements; CW output power; MBE; Si-SiGe; Si/SiGe power HBTs; common-base configuration; dynamic characterisation; emitter current density; heterojunction bipolar transistors; high frequency performance; maximum frequency of oscillation; maximum unilateral gain; parallel emitter-fingers; unity current gain frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940348
  • Filename
    280527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066710