Title :
Dynamic characterisation of Si/SiGe power HBTs
Author :
Erben, U. ; Gruhle, A. ; Schuppen, A. ; Kibbel, H. ; Koenig, U.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ.
fDate :
3/17/1994 12:00:00 AM
Abstract :
Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1×105 A/cm2, a maximum frequency of oscillation of 49 GHz was observed. At 10 GHz a maximum unilateral gain of 14 dB is available, and a CW output power of 1.3 W/mm for a device with 10 parallel emitter-fingers of 1×10 μm2 each was predicted, from CW measurements
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power transistors; semiconductor device testing; silicon; solid-state microwave devices; 1.3 W; 14 dB; 46 GHz; 49 GHz; CW measurements; CW output power; MBE; Si-SiGe; Si/SiGe power HBTs; common-base configuration; dynamic characterisation; emitter current density; heterojunction bipolar transistors; high frequency performance; maximum frequency of oscillation; maximum unilateral gain; parallel emitter-fingers; unity current gain frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940348
