Title :
WP-A4 electrical properties of plasma-deposited Si-N films on GaAs
Author :
Ohnstein, T.R. ; Robinson, G.Y. ; Helix, M.J. ; Streetman, B.G.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Capacitance-voltage characteristics; Electric variables measurement; Gallium arsenide; Metallization; Optical films; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Pollution measurement; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19776
