Title :
Cryogenic noise performance of HEMTs and MESFETs between 300 and 700 MHz
Author :
Woestenburg, E.E.M. ; Nieuwenhuis, L.
Author_Institution :
Radio Obs., Netherlands Found. for Res. in Astron., Dwingeloo
fDate :
3/17/1994 12:00:00 AM
Abstract :
The authors present the noise performance of amplifiers using HEMTs and MESFETs at room temperature and cryogenic temperatures, in the frequency range 300-700 MHz. Results demonstrate that these microwave devices can be applied at frequencies down to at least 300 MHz, giving amplifier noise temperatures below 2 K at 20 K ambient temperature
Keywords :
Schottky gate field effect transistors; cryogenics; high electron mobility transistors; semiconductor device noise; solid-state microwave devices; ultra-high-frequency amplifiers; 20 to 295 K; 300 to 700 MHz; HEMTs; MESFETs; ambient temperature; amplifier noise temperatures; cryogenic temperatures; low noise amplifiers; microwave devices; narrowband amplifiers; noise performance; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940368
