DocumentCode :
1066721
Title :
Cryogenic noise performance of HEMTs and MESFETs between 300 and 700 MHz
Author :
Woestenburg, E.E.M. ; Nieuwenhuis, L.
Author_Institution :
Radio Obs., Netherlands Found. for Res. in Astron., Dwingeloo
Volume :
30
Issue :
6
fYear :
1994
fDate :
3/17/1994 12:00:00 AM
Firstpage :
524
Lastpage :
525
Abstract :
The authors present the noise performance of amplifiers using HEMTs and MESFETs at room temperature and cryogenic temperatures, in the frequency range 300-700 MHz. Results demonstrate that these microwave devices can be applied at frequencies down to at least 300 MHz, giving amplifier noise temperatures below 2 K at 20 K ambient temperature
Keywords :
Schottky gate field effect transistors; cryogenics; high electron mobility transistors; semiconductor device noise; solid-state microwave devices; ultra-high-frequency amplifiers; 20 to 295 K; 300 to 700 MHz; HEMTs; MESFETs; ambient temperature; amplifier noise temperatures; cryogenic temperatures; low noise amplifiers; microwave devices; narrowband amplifiers; noise performance; room temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940368
Filename :
280528
Link To Document :
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