Title :
WP-A7 Predeposition tin doping of molecular beam epitaxial GaAs for power FET´s with constant gm
Author :
Judaprawira, S. ; Wood, C.E.C. ; Eastman, L.F.
fDate :
11/1/1979 12:00:00 AM
Keywords :
Doping; Electron devices; FETs; Filters; Gallium arsenide; Molecular beam epitaxial growth; Polymers; Sensor arrays; Substrates; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19778
