DocumentCode

1066737

Title

WP-A7 Predeposition tin doping of molecular beam epitaxial GaAs for power FET´s with constant gm

Author

Judaprawira, S. ; Wood, C.E.C. ; Eastman, L.F.

Volume

26

Issue

11

fYear

1979

fDate

11/1/1979 12:00:00 AM

Firstpage

1855

Lastpage

1855

Keywords

Doping; Electron devices; FETs; Filters; Gallium arsenide; Molecular beam epitaxial growth; Polymers; Sensor arrays; Substrates; Tin;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19778

Filename

1480356