Title :
WP-B8 high-voltage and current Bi—NbO2—Bi switching devices
Author :
Lalevic, B. ; Shoga, M. ; Levy, Scott
fDate :
11/1/1979 12:00:00 AM
Keywords :
Bismuth; Delay effects; Educational institutions; Laboratories; Niobium compounds; Oxidation; Protection; Pulse circuits; Radio frequency; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19785
