Author :
Zalessky, V.B. ; Pilipovich, V.A. ; Korzhik, M.V. ; Missevich, O.V. ; Fyodorov, A.A. ; Lopatik, A.R. ; Gorodishenin, N.L. ; Shvarkov, D.S. ; Dolgopolov, A.V. ; Shagin, P.M. ; Singovsky, A.V. ; Sugoniaev, V.P. ; Peigneux, J.-P. ; Mendiburu, J.P. ; Nedelec,
Author_Institution :
Inst. for Electron., Acad. of Sci., Minsk, Byelorussia
Abstract :
The main parameters of large-area avalanche photodiodes (APDs) with a new structure of Metal-Resistive-Semiconductor layers (MRS) are described. The first experimental data taken with a small PbWO4 (PWO) electromagnetic calorimeter equipped with a new APD readout system in a 20-70 GeV electron beam at CERN are also presented
Keywords :
avalanche photodiodes; lead compounds; solid scintillation detectors; tungsten compounds; 20 to 70 GeV; APD; Metal-Resistive-Semiconductor layers; PbWO4 scintillators; avalanche photodiode readout; electromagnetic calorimeter; electron beam; high-energy physics; large-area avalanche photodiodes; Avalanche photodiodes; Coatings; Crystals; Dark current; Electronic equipment testing; P-n junctions; Physics; Silicon; Temperature; Voltage;
