Title :
High-gain SiGe transimpedance amplifier array for a 12×10 Gb/s parallel optical-fiber link
Author :
Schild, Alexander ; Rein, Hans-Martin ; Müllrich, Jens ; Altenhain, Lars ; Blank, Jürgen ; Schrödinger, Karl
Author_Institution :
Ruhr-Univ. Bochum, Germany
fDate :
1/1/2003 12:00:00 AM
Abstract :
A transimpedance amplifier array for 12 parallel optical-fiber channels each operating at 10 Gb/s is presented, which is used in the receiver of short-distance links. It stands out for the following features: high gain (transimpedance 25 kΩ in the limiting mode), high input sensitivity and wide input dynamic range (input current swing from 20 to 240 μAp-p), constant output voltage swing (differential 0.5 Vp-p at 50 Ω load), and low power consumption (1.4 W) at a single supply voltage (5 V). Each channel has its own offset-current control circuit. To the best of the authors´ knowledge, the total throughput of 12×10 Gb/s=120 Gb/s is the highest value reported for a single-chip amplifier array. The target specifications have been achieved with the first technological run without needing any redesign. This fact demonstrates that the inherent severe crosstalk problems of such high-gain amplifier arrays can reliably be solved by applying adequate decoupling measures and simulation tools.
Keywords :
Ge-Si alloys; low-power electronics; optical crosstalk; optical fibre communication; optical receivers; semiconductor materials; 1.4 W; 120 Gbit/s; 20 to 240 muA; 5 V; SiGe; constant output voltage swing; crosstalk; decoupling measures; input sensitivity; offset-current control circuit; parallel optical-fiber link; power consumption; short-distance links; throughput; transimpedance amplifier array; wide input dynamic range; Dynamic range; Germanium silicon alloys; Optical amplifiers; Optical arrays; Optical crosstalk; Optical receivers; Optical sensors; Semiconductor optical amplifiers; Silicon germanium; Stimulated emission;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.806271