Title :
Operation of strained-layer (In,Ga)As quantum well lasers prepared on (112)B GaAs substrate
Author :
Sun, D. ; Towe, E.
Author_Institution :
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA
fDate :
3/17/1994 12:00:00 AM
Abstract :
The operation of (In,Ga)As quantum well lasers prepared on [112]-oriented GaAs substrates is reported. Threshold current densities as low as 187 A/cm2 for a 1.57 mm-long device have been obtained under pulsed-mode operation. The demonstration of laser action in a heterostructure grown on the [112]-oriented substrate is important for the design of blue-green light emitters by second harmonic generation
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; optical harmonic generation; semiconductor lasers; (112)B GaAs substrate; 1.57 mm; GaAs; InGaAs; [112]-orientation; blue-green light emitters; design; heterostructure; laser action; pulsed-mode operation; second harmonic generation; strained-layer (In,Ga)As quantum well lasers; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940328
