Title :
High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm
Author :
O´Brien, Stephen ; Gulgazov, V. ; Welch, D.F. ; Lang, Robert J.
fDate :
3/17/1994 12:00:00 AM
Abstract :
Data are presented describing AlGaAs distributed Bragg reflector (DBR) laser diodes operating at 856 nm with single transverse and longitudinal mode behaviour beyond 270 mW CW. The threshold current of these lasers is 35 mA, with a differential quantum efficiency of 58%. Preliminary lifetest data are presented
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser modes; laser transitions; life testing; semiconductor lasers; 270 mW; 35 mA; 58 percent; 856 nm; AlGaAs; DBR LD; differential quantum efficiency; high-power singlemode AlGaAs distributed Bragg reflector laser diodes; lifetest data; longitudinal mode behaviour; single transverse mode behaviour; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940350
