High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multi-quantum well laser diodes emitting at 676 nm

High temperature, low threshold current, and transverse mode stabilised operation is achieved in a separate confinement heterostructure AlGaInP/Ga_0.4In_0.6P compressively strained multiquantum-well structure which was fabricated from an epitaxial wafer grown on misoriented (100) GaAs substrate by low-pressure metal organic vapour phase epitaxy. Remarkable improvements in threshold current and characteristic temperature (T₀) have been demonstrated. The threshold current is 32 mA at room temperature and the emission wavelength is ~676 nm. The characteristic temperature between 20 and 70°C is 162 K, which is the highest CW T₀ value ever reported for devices operating in the visible wavelength region without incorporating multiquantum barriers