DocumentCode
1066961
Title
Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step
Author
Nichols, D.T. ; Lopata, J. ; Hobson, W.S. ; Dutta, N.K. ; Berger, P.R. ; Sivco, D.L. ; Cho, Andrew Y.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ
Volume
30
Issue
6
fYear
1994
fDate
3/17/1994 12:00:00 AM
Firstpage
490
Lastpage
491
Abstract
A strained GaAs/AlGaAs/InGaAs MQW laser has been monolithically integrated with GaAs MESFETs in a differential pair configuration to form a transmitter circuit. The structure used a single epitaxial growth step in which the laser was grown on top of the MESFET. The circuits operate with bandwidths as high as 3.4 GHz
Keywords
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical communication equipment; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 3.4 GHz; GaAs MESFET; GaAs-AlGaAs-InGaAs; MOCVD; bandwidths; differential pair configuration; monolithic GaAs/AlGaAs optical transmitter circuit; monolithic integration; single epitaxial growth step; single growth step; strained GaAs/AlGaAs/InGaAs MQW laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940332
Filename
280550
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