• DocumentCode
    1066982
  • Title

    Failure distributions and area transformation of thin SiO2 films

  • Author

    Ditali, A. ; Black, William

  • Author_Institution
    Micron Technol. Inc., Boise, ID
  • Volume
    30
  • Issue
    6
  • fYear
    1994
  • fDate
    3/17/1994 12:00:00 AM
  • Firstpage
    487
  • Lastpage
    488
  • Abstract
    The failure distributions of a small area can be transformed to distributions of a larger area provided the data to be transformed exhibit a bimodal distribution with an extrinsic region that characterises the defect-related region explicitly. The defect density follows a power-law relationship that shows a decline in defect density as the area increases
  • Keywords
    MOS integrated circuits; electric breakdown of solids; failure analysis; insulated gate field effect transistors; insulating thin films; semiconductor-insulator boundaries; silicon compounds; MOS IC; MOSFET; Si-SiO2; area transformation; bimodal distribution; defect density; defect-related region; extrinsic region; failure distributions; power-law relationship; thin SiO2 films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940322
  • Filename
    280552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1066982